MIM‐Diode‐Like Rectification in Lateral 1T/1H/1T‐MoS2 Homojunctions via Interfacial Dipole Engineering

ABSTRACT Lateral 2D tunnel diodes that reproduce metal‐insulator‐metal (MIM)‐diode‐like rectification without using dissimilar contacts are attractive for scalable nanoelectronics. MoS2 can exist in both the semiconducting 1H phase and the metallic 1T phase, enabling phase‐engineered homojunctions w...

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Auteurs principaux:	Elias Eckmann, Ersoy Şaşıoğlu, Nicki F. Hinsche, Ingrid Mertig
Format:	Artigo
Langue:	Inglês
Publié:	Wiley-VCH 2026-02-01
Collection:	Advanced Electronic Materials
Sujets:	2D materials interface‐dipole engineering lateral homojunction tunnel diodes MoS2 NEGF quantum transport
Accès en ligne:	https://doi.org/10.1002/aelm.202500607
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