Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure

Abstract Here we present a detailed theoretical analysis of the interaction between electrons and optical phonons of interface and confined modes in a wurtzite AlN/GaN/AlN quantum well heterostructure based on the uniaxial dielectric continuum model. The formalism describing the interface and confin...

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Autors principals:	Kihoon Park, Ahmed Mohamed, Mitra Dutta, Michael A. Stroscio, Can Bayram
Format:	Artigo
Idioma:	Inglês
Publicat:	Nature Portfolio 2018-10-01
Col·lecció:	Scientific Reports
Matèries:	Average Group Velocity Electron-phonon Scattering Rate Interface Phonon Modes Electron-phonon Scat Tering Phonon Frequency Range
Accés en línia:	https://doi.org/10.1038/s41598-018-34441-4
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