Nucleation sites of expanded stacking faults detected by in operando x-ray topography analysis to design epitaxial layers for bipolar-degradation-free SiC MOSFETs
We investigated the nucleation sites of expanded single Shockley-type stacking faults (1SSFs) in a silicon carbide (SiC) metal–oxide–semiconductor field effect transistor (MOSFET) and demonstrated epitaxial layers designed for bipolar-degradation-free SiC MOSFETs. Since the sufficient hole density j...
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| Principais autores: | , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
AIP Publishing LLC
2022-03-01
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| coleção: | AIP Advances |
| Acesso em linha: | http://dx.doi.org/10.1063/5.0079925 |
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