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Development and Fabrication of AlGaInP-Based Flip-Chip Micro-LEDs

The fabrication of AlGaInP-based flip-chip micro light-emitting-diodes (LED; emitting area: 4.5 mil × 5 mil) with horizontal electrodes is reported in this paper. The thickness of the epitaxial layer of the thin LED structure was reduced to 50% of that of the traditional thick LED, whereas ca...

Ausführliche Beschreibung

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Bibliografische Detailangaben
Hauptverfasser: Ray-Hua Horng, Huan-Yu Chien, Ken-Yen Chen, Wei-Yu Tseng, Yu-Ting Tsai, Fu-Gow Tarntair
Format: Artigo
Sprache:Inglês
Veröffentlicht: IEEE 2018-01-01
Schriftenreihe:IEEE Journal of the Electron Devices Society
Schlagworte:
Online-Zugang:https://ieeexplore.ieee.org/document/8332488/
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