Properties of Erbium and Ytterbium Doped Gallium Nitride Layers Fabricated by Magnetron Sputtering
We report about some properties of erbium and erbium/ytterbium doped gallium nitride (GaN) layers fabricated by magnetron sputtering on<br />silicon, quartz and Corning glass substrates. For fabricating GaN layers two types of targets were used - gallium in a stainless steel cup and<br />a Ga<sub>2<...
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| Үндсэн зохиолчид: | , , , , , , , |
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| Формат: | Artigo |
| Хэл сонгох: | Inglês |
| Хэвлэсэн: |
CTU Central Library
2006-01-01
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| Цуврал: | Acta Polytechnica |
| Нөхцлүүд: | |
| Онлайн хандалт: | https://ojs.cvut.cz/ojs/index.php/ap/article/view/900 |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
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