Nanostructured Hydrogenated Silicon Films by Hot-Wire Chemical Vapor Deposition: the Influence of Substrate Temperature on Material Properties

Thin films of hydrogenated nanocrystalline silicon are prepared at reasonably higher deposition rates (9-13 Å/s) by indigenously fabricated hot-wire chemical vapor deposition system at various substrate temperatures (Ts). In this paper we report extensively studied structural, optical and electrical...

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Autors principals:	V.S. Waman, M.M. Kamble, M.R. Pramod, A.M. Funde, V.G. Sathe, S.W. Gosavi, S.R. Jadkar
Format:	Artigo
Idioma:	Inglês
Publicat:	Sumy State University 2011-01-01
Col·lecció:	Журнал нано- та електронної фізики
Matèries:	Hot Wire Chemical Vapor Deposition Nanocrystalline Silicon Thin Films Structural Properties Optical Properties Electrical Properties
Accés en línia:	http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%203/articles/jnep_2011_V3_N1(Part3)_590-600.pdf
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