Improvement of Light Extraction in Deep Ultraviolet GaN Light Emitting Diodes with Mesh P-Contacts
One of the main reasons that the emission efficiency of GaN-based light-emitting diodes (LEDs) decreases significantly as the emission wavelength shorter than 300 nm is the low light extraction efficiency (LEE). Especially in deep ultra-violet (DUV) LEDs, light propagating outside the escape cone an...
में बचाया:
| मुख्य लेखकों: | , , , |
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| स्वरूप: | Artigo |
| भाषा: | Inglês |
| प्रकाशित: |
MDPI AG
2020-08-01
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| श्रृंखला: | Applied Sciences |
| विषय: | |
| ऑनलाइन पहुंच: | https://www.mdpi.com/2076-3417/10/17/5783 |
| टैग: |
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