Effects of Lateral Optical Confinement In GaN VCSELs With Double Dielectric DBRs
Two types of GaN vertical-cavity surface-emitting lasers (VCSELs), with and without lateral optical confinement (LOC) structure, were fabricated and their performances were compared. Compared with the VCSEL without LOC, the device with LOC showed a great improvement in threshold current, slope effic...
Gorde:
| Egile Nagusiak: | , , , , , , , , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
IEEE
2020-01-01
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| Saila: | IEEE Photonics Journal |
| Gaiak: | |
| Sarrera elektronikoa: | https://ieeexplore.ieee.org/document/9028242/ |
| Etiketak: |
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