Effects of Lateral Optical Confinement In GaN VCSELs With Double Dielectric DBRs

Two types of GaN vertical-cavity surface-emitting lasers (VCSELs), with and without lateral optical confinement (LOC) structure, were fabricated and their performances were compared. Compared with the VCSEL without LOC, the device with LOC showed a great improvement in threshold current, slope effic...

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Principais autores:	Rongbin Xu, Yang Mei, Huan Xu, Tianrui Yang, Leiying Ying, Zhiwei Zheng, Hao Long, Baoping Zhang, Jianping Liu
פורמט:	Artigo
שפה:	Inglês
יצא לאור:	IEEE 2020-01-01
סדרה:	IEEE Photonics Journal
נושאים:	Semiconductor lasers vertical cavity surface emitting lasers lateral optical confinement.
גישה מקוונת:	https://ieeexplore.ieee.org/document/9028242/
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