Effect of Al₂O₃ Passivation Layer and Cu Electrodes on High Mobility of Amorphous IZO TFT

In this paper, we present a high mobility amorphous indium-zinc-oxide (a-IZO) thin film transistor (TFT) based on copper (Cu) source/drain electrodes (S/D) and aluminum oxide (Al₂O₃) passivation layer (PVL). The mechanism of high mobility for the a-IZO TFT based on Cu S/D with...

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Bibliografische gegevens

Hoofdauteurs:	Shiben Hu, Honglong Ning, Kuankuan Lu, Zhiqiang Fang, Ruiqiang Tao, Rihui Yao, Jianhua Zou, Miao Xu, Lei Wang, Junbiao Peng
Formaat:	Artigo
Taal:	Inglês
Gepubliceerd in:	IEEE 2018-01-01
Reeks:	IEEE Journal of the Electron Devices Society
Onderwerpen:	Copper aluminum oxide a-IZO Schottky contact mobility
Online toegang:	https://ieeexplore.ieee.org/document/8326485/
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