All-Sputtering, High-Transparency, Good-Stability Coplanar Top-Gate Thin Film Transistors

In this work, transparent, stable coplanar top-gate thin film transistors (TFTs) with an active layer of neodymium-doped indium oxide and zinc oxide (Nd-IZO) were successfully fabricated on a glass substrate by all sputtering processes. The devices with a post-annealing temperature of 400 °C exh...

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Detalhes bibliográficos

Principais autores:	Jianqiu Chen, Xiuqi Huang, Qunjie Li, Zhiqiang Fang, Honglong Ning, Ruiqiang Tao, Hongfu Liang, Yicong Zhou, Rihui Yao, Junbiao Peng
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2018-12-01
coleção:	Applied Sciences
Assuntos:	thin film transistors stability top-gate Nd-IZO
Acesso em linha:	http://www.mdpi.com/2076-3417/9/1/83
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