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Role of mechanical stress on the electrothermal and OFF state current in scaled FinFET devices

Abstract The electrothermal characteristics and leakage current of a tall FinFET device were investigated using the hydrodynamic transport model coupled with a quantum-corrected diffusive transport mechanism-based TCAD simulation. The effects of strain on the electrothermal characteristics and the g...

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Autori principali: Shubham, Rajan Kumar Pandey
Natura: Artigo
Lingua:Inglês
Pubblicazione: Nature Portfolio 2026-04-01
Serie:Scientific Reports
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Accesso online:https://doi.org/10.1038/s41598-026-46949-1
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