Research on a new thermoelectric material obtained by doping of n-HfNiSn with Nb atoms
The structural, kinetic, energetic, and magnetic properties of the new thermoelectric material Hf1-xNbxNiSn, obtained by doping the n-HfNiSn semiconductor with Nb atoms introduced into the structure by substituting Hf atoms in the crystallographic position 4a, have been investigated. It has been est...
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| Autori principali: | , , , , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Vasyl Stefanyk Carpathian National University
2025-12-01
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| Serie: | Фізика і хімія твердого тіла |
| Soggetti: | |
| Accesso online: | https://journals.pnu.edu.ua/index.php/pcss/article/view/8568 |
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