The Asymmetry of the Distribution Density Volume Uncompensated Charge at the Metallurgical p-n Junction

The features of the formation of shallow junction and its calculation for a solar cell based on single-crystal silicon with front boron were considered. The ambiguity of the calculated profiles recompensating impurity, which is dependent on the accuracy of the constants of diffusion equations, was s...

Celý popis

Podrobná bibliografie

Hlavní autoři:	A.S. Mazinov, А.I. Shevchenko, M.A. Bykov
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Sumy State University 2012-11-01
Edice:	Журнал нано- та електронної фізики
Témata:	Shallow p-n junction Doping profile of the crystal Diffusion activation energy for diffusion Density of the charge distribution Uncompensated charge p-n junctio
On-line přístup:	http://jnep.sumdu.edu.ua/download/numbers/2012/3/articles/jnep_2012_V4_03026.pdf
Tagy:	Přidat tag Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!