The Asymmetry of the Distribution Density Volume Uncompensated Charge at the Metallurgical p-n Junction

The features of the formation of shallow junction and its calculation for a solar cell based on single-crystal silicon with front boron were considered. The ambiguity of the calculated profiles recompensating impurity, which is dependent on the accuracy of the constants of diffusion equations, was s...

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Váldodahkkit:	A.S. Mazinov, А.I. Shevchenko, M.A. Bykov
Materiálatiipa:	Artigo
Giella:	Inglês
Almmustuhtton:	Sumy State University 2012-11-01
Ráidu:	Журнал нано- та електронної фізики
Fáttát:	Shallow p-n junction Doping profile of the crystal Diffusion activation energy for diffusion Density of the charge distribution Uncompensated charge p-n junctio
Liŋkkat:	http://jnep.sumdu.edu.ua/download/numbers/2012/3/articles/jnep_2012_V4_03026.pdf
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