InGaAsP/InP Nanocavity for Single-Photon Source at 1.55-μm Telecommunication Band

Abstract A new structure of 1.55-μm pillar cavity is proposed. Consisting of InP-air-aperture and InGaAsP layers, this cavity can be fabricated by using a monolithic process, which was difficult for previous 1.55-μm pillar cavities. Owing to the air apertures and tapered distributed Bragg reflectors...

Бүрэн тодорхойлолт

Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	Hai-Zhi Song, Mukhtar Hadi, Yanzhen Zheng, Bizhou Shen, Lei Zhang, Zhilei Ren, Ruoyao Gao, Zhiming M. Wang
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	SpringerOpen 2017-02-01
Цуврал:	Nanoscale Research Letters
Нөхцлүүд:	Nanocavity Single-photon source Quantum dot Distributed Bragg reflector
Онлайн хандалт:	http://link.springer.com/article/10.1186/s11671-017-1898-y
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!