InGaAsP/InP Nanocavity for Single-Photon Source at 1.55-μm Telecommunication Band
Abstract A new structure of 1.55-μm pillar cavity is proposed. Consisting of InP-air-aperture and InGaAsP layers, this cavity can be fabricated by using a monolithic process, which was difficult for previous 1.55-μm pillar cavities. Owing to the air apertures and tapered distributed Bragg reflectors...
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| Главные авторы: | , , , , , , , |
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| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
SpringerOpen
2017-02-01
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| Серии: | Nanoscale Research Letters |
| Предметы: | |
| Online-ссылка: | http://link.springer.com/article/10.1186/s11671-017-1898-y |
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