Annealing‐Induced Chemical Interaction at the Ag/In2O3:H Interface as Revealed by In Situ Photoelectron Spectroscopy
Abstract Hydrogen‐doped In2O3 (In2O3:H) is highly conductive while maintaining extraordinary transparency, thus making it a very attractive material for applications in optoelectronic devices such as (multijunction) solar cells or light‐emitting devices. However, the corresponding metal/In2O3:H cont...
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| Principais autores: | , , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Wiley-VCH
2023-04-01
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| coleção: | Advanced Materials Interfaces |
| Assuntos: | |
| Acesso em linha: | https://doi.org/10.1002/admi.202202347 |
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