Annealing‐Induced Chemical Interaction at the Ag/In2O3:H Interface as Revealed by In Situ Photoelectron Spectroscopy

Abstract Hydrogen‐doped In2O3 (In2O3:H) is highly conductive while maintaining extraordinary transparency, thus making it a very attractive material for applications in optoelectronic devices such as (multijunction) solar cells or light‐emitting devices. However, the corresponding metal/In2O3:H cont...

Täydet tiedot

Bibliografiset tiedot

Päätekijät:	Ting Xiao, Darja Erfurt, Roberto Félix, Xiaxia Liao, Johannes Frisch, Daniel Abou‐Ras, Katherine A. Mazzio, Regan G. Wilks, Rutger Schlatmann, Marcus Bär
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	Wiley-VCH 2023-04-01
Sarja:	Advanced Materials Interfaces
Aiheet:	Ag/In 2O 3:H contact photoelectron spectroscopy silver oxidation topography
Linkit:	https://doi.org/10.1002/admi.202202347
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