Leveraging GaN for DC-DC Power Modules for Efficient EVs: A Review
Limitations of Silicon (Si)-based devices have compelled us to use alternative devices for modern power electronics applications. Material attributes of wide-band-gap devices (such as GaN and SiC) possess the ability to bridge these gaps. They can be used for higher power applications and provide hi...
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| Hlavní autoři: | , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
IEEE
2023-01-01
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| Edice: | IEEE Access |
| Témata: | |
| On-line přístup: | https://ieeexplore.ieee.org/document/10237200/ |
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