Leveraging GaN for DC-DC Power Modules for Efficient EVs: A Review
Limitations of Silicon (Si)-based devices have compelled us to use alternative devices for modern power electronics applications. Material attributes of wide-band-gap devices (such as GaN and SiC) possess the ability to bridge these gaps. They can be used for higher power applications and provide hi...
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| Principais autores: | , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
IEEE
2023-01-01
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| Series: | IEEE Access |
| Assuntos: | |
| Acceso en liña: | https://ieeexplore.ieee.org/document/10237200/ |
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