Characterization and modeling of high frequency equivalent noise in GFET based on contact resistance
A small signal equivalent circuit model of Graphene Field Effect Transistors （GFET） is proposed， which takes into account the internal physical transmission phenomenon of metal-graphene interface， namely the contact resistance between drain and source.A method is proposed to separate the contact re...
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| Hauptverfasser: | , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Editorial Department of Journal of Sichuan University (Natural Science Edition)
2024-03-01
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| Schriftenreihe: | 四川大学学报. 自然科学版 |
| Schlagworte: | |
| Online-Zugang: | http://science.scu.edu.cn/thesisDetails#10.19907/j.0490-6756.2024.024004 |
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