An Experimental Approach to Characterizing the Channel Local Temperature Induced by Self-Heating Effect in FinFET

In this paper, we have developed a methodology of a lateral profiling technique of the channel local temperature in 14 nm FinFET, incurred by the self-heating effect (SHE). As SHE happens, the thermal source generated near the drain will dissipate toward the source side. Since the interaction betwee...

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Главные авторы:	E Ray Hsieh, Meng-Ru Jiang, Jian-Li Lin, Steve S. Chung, Tse Pu Chen, Shih An Huang, Tai-Ju Chen, Osbert Cheng
Формат:	Artigo
Язык:	Inglês
Опубликовано:	IEEE 2018-01-01
Серии:	IEEE Journal of the Electron Devices Society
Предметы:	FinFET self-heating effect random telegraph noise
Online-ссылка:	https://ieeexplore.ieee.org/document/8418834/
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