Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire

Epitaxial layers of α-Ga2O3 with different Sn doping levels were grown by halide vapor phase epitaxy on sapphire. The films had shallow donor concentrations ranging from 1017 to 4.8 × 1019 cm−3. Deep level transient spectroscopy of the lowest doped samples revealed dominant A traps with level Ec − 0...

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Autores principales:	A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, E. B. Yakimov, V. I. Nikolaev, S. I. Stepanov, A. I. Pechnikov, A. V. Chernykh, K. D. Shcherbachev, A. S. Shikoh, A. Kochkova, A. A. Vasilev, S. J. Pearton
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	AIP Publishing LLC 2019-05-01
Colección:	APL Materials
Acceso en línea:	http://dx.doi.org/10.1063/1.5094787
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