Wafer-scale uniform epitaxy of transferable 2D single crystals for gate-all-around nanosheet field effect transistors

Abstract Gate-all-around (GAA) nanosheet field-effect transistors (FETs) with two-dimensional (2D) semiconductor channels surrounded by high-κ dielectrics show outstanding performance and hold promise for ultimate miniaturization in the post-Moore era. However, the synthesis of uniform wafer-scale 2...

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Hlavní autoři:	Chengyuan Xue, Congwei Tan, Xin Gao, Junchuan Tang, Weiyu Sun, Yuling Yin, Mengdi Wang, Xiaoyin Gao, Hao An, Boyang Fu, Wanqing Liu, Yuteng Wang, Ye Li, Feng Ding, Hailin Peng
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Nature Portfolio 2025-11-01
Edice:	Nature Communications
On-line přístup:	https://doi.org/10.1038/s41467-025-65641-y
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