Reduced Variability in Threshold Switches Using Heterostructures of SiOx and Vertically Aligned MoS2

ABSTRACT Two‐dimensional (2D) materials and their heterostructures offer promising pathways for intercalated ion migration and regulated filament growth in resistive switching (RS) devices, enabled by their van der Waals (vdW) gaps. In vertically aligned 2D materials, this vdW gap‐mediated ion trans...

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Bibliografische Detailangaben

Hauptverfasser:	Jimin Lee, Rana Walied Ahmad, Sofía Cruces, Dennis Braun, Lukas Völkel, Ke Ran, Joachim Mayer, Stephan Menzel, Alwin Daus, Max C. Lemme
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	Wiley-VCH 2026-04-01
Schriftenreihe:	Advanced Electronic Materials
Schlagworte:	conductive filaments heterostructure memristive devices threshold switching variability‐aware simulations vertically aligned molybdenum disulfide
Online-Zugang:	https://doi.org/10.1002/aelm.202500800
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