Volatile MoS2 Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications

Layered 2D semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed for resistive switching (RS) in devices for emerging memories, selectors, and neuromorphic computing. To date, all lateral molybdenum disul...

Description complète

Détails bibliographiques

Auteurs principaux:	Sofía Cruces, Mohit Dineshkumar Ganeriwala, Jimin Lee, Lukas Völkel, Dennis Braun, Annika Grundmann, Ke Ran, Enrique González Marín, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Andrés Godoy, Alwin Daus, Max Christian Lemme
Format:	Artigo
Langue:	Inglês
Publié:	Wiley-VCH 2025-05-01
Collection:	Small Science
Sujets:	2D materials compact model ion migration lateral memristor neuromorphic computing resistive switching
Accès en ligne:	https://doi.org/10.1002/smsc.202400523
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!