Unconventional magnetoresistance and resistivity scaling in amorphous CoSi thin films

Abstract The resistivity scaling of Cu electrical interconnects represents a critical challenge in Si CMOS technology. As interconnect dimensions reach below 10 nm, Cu resistivity increases significantly due to surface scattering. Topological materials have been considered for application in ultra-s...

Full description

Bibliographic Details

Main Authors:	Lorenzo Rocchino, Alan Molinari, Igor Kladaric, Federico Balduini, Heinz Schmid, Marilyne Sousa, John Bruley, Holt Bui, Bernd Gotsmann, Cezar B. Zota
Format:	Artigo
Language:	Inglês
Published:	Nature Portfolio 2024-09-01
Series:	Scientific Reports
Online Access:	https://doi.org/10.1038/s41598-024-71614-w
Tags:	Add Tag No Tags, Be the first to tag this record!