Unconventional magnetoresistance and resistivity scaling in amorphous CoSi thin films

Abstract The resistivity scaling of Cu electrical interconnects represents a critical challenge in Si CMOS technology. As interconnect dimensions reach below 10 nm, Cu resistivity increases significantly due to surface scattering. Topological materials have been considered for application in ultra-s...

Celý popis

Podrobná bibliografie

Hlavní autoři:	Lorenzo Rocchino, Alan Molinari, Igor Kladaric, Federico Balduini, Heinz Schmid, Marilyne Sousa, John Bruley, Holt Bui, Bernd Gotsmann, Cezar B. Zota
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Nature Portfolio 2024-09-01
Edice:	Scientific Reports
On-line přístup:	https://doi.org/10.1038/s41598-024-71614-w
Tagy:	Přidat tag Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!