Quantitative analysis of the Schottky interface of reduced graphene oxide Schottky diodes
A Schottky contact is greatly vital for electronic devices; therefore, a quantitative analysis of the Schottky interface is important in realizing a high-performance Schottky diode. In this study, we fabricate an r-GO-based Schottky diode and elucidate the charge traps in r-GO by analyzing the curre...
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| Autori principali: | , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
IOP Publishing
2020-01-01
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| Serie: | Materials Research Express |
| Soggetti: | |
| Accesso online: | https://doi.org/10.1088/2053-1591/abb613 |
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