Controlling the Doping Depth in Silicon Micropillars
Micropillar arrays with radial p–n junctions are attractive for photovoltaic applications, because the light absorption and carrier collection become decoupled. The main challenge in manufacturing radial p–n junctions is achieving shallow (dopant depth <200 nm) and heavy doping (>10<sup>20</sup> cm<...
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| Format: | Artigo |
| Langue: | Inglês |
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MDPI AG
2020-07-01
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| Collection: | Applied Sciences |
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| Accès en ligne: | https://www.mdpi.com/2076-3417/10/13/4581 |
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