Data voltage compensation scheme for active-matrix organic light-emitting diode pixel circuits using double-gate indium-gallium-zinc oxide thin-film transistors

Abstract This study proposes a data voltage compensation scheme that addresses bottom-gate-to-source voltage (V BGS) differences in double-gate indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) used in active-matrix organic light-emitting diode (AMOLED) pixel circuits. The compensation f...

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Autori principali:	Shin-Hyeong Kim, Joon-Sung Choi, Kook Chul Moon, Yong-Sang Kim
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	Taylor & Francis Group 2026-06-01
Serie:	Journal of Information Display
Soggetti:	Organic light-emitting diode Pixel circuit Indium-gallium-zinc oxide Double-gate thin-film transistor Data voltage compensation
Accesso online:	https://doi.org/10.1007/s44469-026-00015-8
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