Simulation of Carrier Injection Efficiency in AlGaN-Based UV-Light-Emitting Diodes

Numerical simulations of carrier transport in aluminium gallium nitride based ultraviolet light emitting diodes (UV-LED) are performed in order to understand injection efficiency for light sources in the deep ultraviolet. With our simulator, calibrated with experimental data from a 265 nm UV-LED, qu...

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Autori principali:	Gregor Hofmann, Anton Muhin, Norman Susilo, Friedhard Romer, Tim Wernicke, Michael Kneissl, Bernd Witzigmann
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	IEEE 2024-01-01
Serie:	IEEE Photonics Journal
Soggetti:	Efficiency gallium nitride LED light emitting diode light source modeling
Accesso online:	https://ieeexplore.ieee.org/document/10602746/
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