Study on Single-event Gate Rupture Mechanism of Asymmetric-trench SiC MOSFET
The demand for kilovolt-level radiation-hardened SiC devices in modern spacecraft is urgent. To provide a theoretical basis for the hardening design of SiC MOSFETs against single-event gate rupture (SEGR), a study on the single-event effects of 1 200 V asymmetric-trench SiC MOSFETs was conducted, an...
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| Автор: | |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
Editorial Board of Atomic Energy Science and Technology
2025-04-01
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| Серія: | Yuanzineng kexue jishu |
| Предмети: | |
| Онлайн доступ: | https://yznkxjs.xml-journal.net/article/doi/10.7538/yzk.2024.youxian.0629 |
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