Giant tunnelling electroresistance in atomic-scale ferroelectric tunnel junctions
Abstract Ferroelectric tunnel junctions are promising towards high-reliability and low-power non-volatile memories and computing devices. Yet it is challenging to maintain a high tunnelling electroresistance when the ferroelectric layer is thinned down towards atomic scale because of the ferroelectr...
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| Hauptverfasser: | , , , , , , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Nature Portfolio
2024-01-01
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| Schriftenreihe: | Nature Communications |
| Online-Zugang: | https://doi.org/10.1038/s41467-024-44927-7 |
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