Giant Tunneling Electroresistance and Anisotropic Photoresponse in Sliding Ferroelectric Homojunctions Based on Bilayer Janus MoSSe

Interlayer-sliding ferroelectricity in van der Waals bilayers enables ultralow-power switching, but practical devices are often limited by contact/interface scattering and weak coupling between polarization and transport. We propose homophase lateral architectures based on bilayer Janus MoSSe: a 1T/...

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Autori principali:	Huxiao Yang, Yuehua Xu
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	MDPI AG 2026-03-01
Serie:	Nanomaterials
Soggetti:	two-dimensional materials sliding ferroelectricity electronic properties tunneling electroresistance optoelectronic properties
Accesso online:	https://www.mdpi.com/2079-4991/16/6/370
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