Modelling and analysis on short-circuit failure for press-pack IGBT devices used in VSC-HVDC converter

Press-pack insulated gate bipolar transistor (IGBT) device is the key component in the voltage source converter high voltage direct current (VSC-HVDC) due the advantage of the short-circuit failure. However, it is difficult to analyse the IGBT short-circuit failure mode due to the complex packaging...

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Detalhes bibliográficos

Principais autores:	Ran Yao, Hui Li, Wei Lai, Shenyang Kang, Jili Deng, Haiyan Long, Meimei Zheng, Jinyuan Li, Yaosheng Li
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Wiley 2019-01-01
coleção:	The Journal of Engineering
Assuntos:	HVDC power transmission HVDC power convertors failure analysis bipolar transistor circuits power transmission reliability voltage-source convertors press-pack IGBT device IGBT short-circuit failure mode short failure time short-circuit tests short-circuit failure position failure stage VSC-HVDC converter reliability voltage 3.3 kV current 50.0 A
Acesso em linha:	https://digital-library.theiet.org/content/journals/10.1049/joe.2018.8668
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