Spatial and time-resolved properties of emission enhancement in polar/semi-polar InGaN/GaN by surface plasmon resonance

Light-emitting diodes (LEDs) are widely used as next-generation light sources because of their various advantages. However, their luminous efficiency is remarkably low at the green-emission wavelength. The luminous efficiencies of InGaN/GaN quantum wells (QWs) significantly decrease with increasing...

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Autors principals:	Ikeda Kento, Kawai Kanata, Kametani Jun, Matsuyama Tetsuya, Wada Kenji, Okada Narihito, Tadatomo Kazuyuki, Okamoto Koichi
Format:	Artigo
Idioma:	Inglês
Publicat:	Wiley 2024-02-01
Col·lecció:	Nanophotonics
Matèries:	surface plasmon resonance plasmonics ingan/gan semi-polar light-emitting diodes micro-photoluminescence
Accés en línia:	https://doi.org/10.1515/nanoph-2023-0758
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