Electronic transport in reactively sputtered Mn3GaN films prepared under optimized nitrogen flow

Mn-based nitrides with antiperovskite structures have several properties that can be utilized for antiferromagnetic spintronics. Their magnetic properties depend on the structural quality, composition and doping of the cubic antiperovskite structure. Such nitride thin films are usually produced by r...

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Hlavní autoři:	Christoph Sürgers, Gerda Fischer, Sihao Deng, Dongmei Hu, Cong Wang
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	IOP Publishing 2024-01-01
Edice:	JPhys Materials
Témata:	thin films antiperovskite antiferromagnetism nitride films reactive sputtering resistivity
On-line přístup:	https://doi.org/10.1088/2515-7639/ad71f5
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