Conducted Common-Mode Electromagnetic Interference Analysis of Gate Drivers for High-Voltage SiC Devices

Power conversion equipment based on high-voltage SiC devices offers significant advantages in efficiency and power density. However, during high-voltage, high-power switching operations, severe electromagnetic interference (EMI) can easily occur. It could cause the false triggering of devices and re...

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Principais autores:	Kai Xiao, Haibo Tang, Zhihong Cai, Yansheng Zou, Jianyu Pan
פורמט:	Artigo
שפה:	Inglês
יצא לאור:	MDPI AG 2025-11-01
סדרה:	Energies
נושאים:	high-voltage SiC devices common-mode current suppression interference immunity half-bridge module
גישה מקוונת:	https://www.mdpi.com/1996-1073/18/23/6083
תגים:	הוספת תג אין תגיות, היה/י הראשונ/ה לתייג את הרשומה!