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Optimization of the Cathode Arc Plasma Deposition Processing Parameters of ZnO Film Using the Grey-Relational Taguchi Method

We deposited undoped ZnO films on the glass substrate at a low temperature (<70°C) using cathode arc plasma deposition (CAPD) and the grey-relational Taguchi method was used to determine the processing parameters of ZnO thin films. The Taguchi method with an L9 orthogonal array, signal-to-noise (S/N...

Ausführliche Beschreibung

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Bibliografische Detailangaben
Hauptverfasser: Shuo-Fu Hsu, Jyh-Horng Chou, Chun-Hsiung Fang, Min-Hang Weng
Format: Artigo
Sprache:Inglês
Veröffentlicht: Wiley 2014-01-01
Schriftenreihe:Advances in Materials Science and Engineering
Online-Zugang:http://dx.doi.org/10.1155/2014/187416
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