A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications

This article presents a set of measured benchmarks for the noise and gain performance of six different millimeter-wave (mm-wave) gallium nitride (GaN) high electron mobility transistor (HEMT) technologies fabricated at four different foundries in the United States. Measurements of the GaN transistor...

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Principais autores:	Nicholas C. Miller, Andrea Arias-Purdue, Erdem Arkun, David Brown, James F. Buckwalter, Robert L. Coffie, Andrea Corrion, Daniel J. Denninghoff, Michael Elliott, Dave Fanning, Ryan Gilbert, Daniel S. Green, Florian Herrault, Ben Heying, Casey M. King, Eythan Lam, Jeong-Sun Moon, Petra V. Rowell, Georges Siddiqi, Ioulia Smorchkova, Joe Tai, Jansen Uyeda, Mike Wojtowicz
פורמט:	Artigo
שפה:	Inglês
יצא לאור:	IEEE 2023-01-01
סדרה:	IEEE Journal of Microwaves
נושאים:	Gallium nitride (GaN) high electron mobility transistor (HEMT) noise parameters low noise amplifier
גישה מקוונת:	https://ieeexplore.ieee.org/document/10260709/
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