Thermal annealing of clusters and point defects in n-Si (Cz) irradiated by fast-pile neutrons
Thermal stability of clusters and point defects in n-Si grown by Czochralski technique (Cz) was studied after irradiation by thefluence ~ (2 ÷ 4) ⋅ 1013 no ⋅сm-2 of fast-pile neutrons. The effective concentration of carriers after series of isochronal and isothermal annealings of irradiated n-type s...
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| Autors principals: | , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Institute for Nuclear Research, National Academy of Sciences of Ukraine
2008-08-01
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| Col·lecció: | Ядерна фізика та енергетика |
| Accés en línia: | http://jnpae.kinr.kiev.ua/24(2)/Articles_PDF/jnpae-2008-2(24)-0073-Dolgolenko.pdf |
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