Digital and Analog Resistive Switching Behavior in Si-NCs Embedded in a Si/SiO₂ Multilayer Structure for Neuromorphic Systems

In this work, we report the digital and analog resistive-switching (RS) characteristics in a memristor based on silicon nanocrystals (Si-NCs) integrated into a complementary metal-oxide-semiconductor (MOS) structure. Si-NCs with a diameter of 5.48 ± 1.24 nm embedded in a SiO₂/Si-NCs/SiO<s...

Täydet tiedot

Bibliografiset tiedot

Päätekijät:	Alfredo Morales-Sánchez, Karla Esther González-Flores, Sergio Alfonso Pérez-García, Sergio González-Torres, Blas Garrido-Fernández, Luis Hernández-Martínez, Mario Moreno-Moreno
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	MDPI AG 2023-03-01
Sarja:	Nanomaterials
Aiheet:	silicon nanocrystals multilayers resistive switching memristors neuromorphic computing
Linkit:	https://www.mdpi.com/2079-4991/13/6/986
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