High-Performance Thin-Film Transistors with ZnO:H/ZnO Double Active Layers Fabricated at Room Temperature

H doping can enhance the performance of ZnO thin-film transistors (TFTs) to a certain extent, and the design of double active layers is an effective way to further improve a device’s performance. However, there are few studies on the combination of these two strategies. We fabricated TFTs with ZnO:H...

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Principais autores:	Daoqin Wang, Zongjin Jiang, Linhan Li, Deliang Zhu, Chunfeng Wang, Shun Han, Ming Fang, Xinke Liu, Wenjun Liu, Peijiang Cao, Youming Lu
פורמט:	Artigo
שפה:	Inglês
יצא לאור:	MDPI AG 2023-04-01
סדרה:	Nanomaterials
נושאים:	thin-film transistors ZnO:H/ZnO double active layers RF magnetron sputtering room temperature
גישה מקוונת:	https://www.mdpi.com/2079-4991/13/8/1422
תגים:	הוספת תג אין תגיות, היה/י הראשונ/ה לתייג את הרשומה!