High-Performance Thin-Film Transistors with ZnO:H/ZnO Double Active Layers Fabricated at Room Temperature

H doping can enhance the performance of ZnO thin-film transistors (TFTs) to a certain extent, and the design of double active layers is an effective way to further improve a device’s performance. However, there are few studies on the combination of these two strategies. We fabricated TFTs with ZnO:H...

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Hlavní autoři:	Daoqin Wang, Zongjin Jiang, Linhan Li, Deliang Zhu, Chunfeng Wang, Shun Han, Ming Fang, Xinke Liu, Wenjun Liu, Peijiang Cao, Youming Lu
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	MDPI AG 2023-04-01
Edice:	Nanomaterials
Témata:	thin-film transistors ZnO:H/ZnO double active layers RF magnetron sputtering room temperature
On-line přístup:	https://www.mdpi.com/2079-4991/13/8/1422
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