Performance study of double-gate graphene nanoribbon TFET for low power applications
Tunnel field-effect transistors (TFETs) are considered suitable for low-power applications because of their steep subthreshold swing and reduced leakage current. However, conventional silicon TFETs suffer from low ON current, which limits their performance. In this work, a double-gate graphene nanor...
Sábháilte in:
| Príomhchruthaitheoirí: | , |
|---|---|
| Formáid: | Artigo |
| Teanga: | Inglês |
| Foilsithe / Cruthaithe: |
Elsevier
2026-10-01
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| Sraith: | Next Materials |
| Ábhair: | |
| Rochtain ar líne: | http://www.sciencedirect.com/science/article/pii/S2949822826011044 |
| Clibeanna: |
Níl clibeanna ann, Bí ar an gcéad duine le clib a chur leis an taifead seo!
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