Performance study of double-gate graphene nanoribbon TFET for low power applications
Tunnel field-effect transistors (TFETs) are considered suitable for low-power applications because of their steep subthreshold swing and reduced leakage current. However, conventional silicon TFETs suffer from low ON current, which limits their performance. In this work, a double-gate graphene nanor...
Gorde:
| Egile Nagusiak: | , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Elsevier
2026-10-01
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| Saila: | Next Materials |
| Gaiak: | |
| Sarrera elektronikoa: | http://www.sciencedirect.com/science/article/pii/S2949822826011044 |
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