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Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure

In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM) cell based on a polycrystalline silicon dual-gate metal-oxide-semiconductor field-effect transistor with a fin-shaped structure was optimized and analyzed using technology computer-aided design simulation. The propo...

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Principais autores: Hee Dae An, Sang Ho Lee, Jin Park, So Ra Min, Geon Uk Kim, Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee, In Man Kang
Formato: Artigo
Idioma:Inglês
Publicado: MDPI AG 2022-10-01
Series:Nanomaterials
Assuntos:
dual-gate
grain boundary
polycrystalline silicon
1T-DRAM
metal-oxide-semiconductor field-effect transistor
sensing margin
Acceso en liña:https://www.mdpi.com/2079-4991/12/19/3526
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