High‐Mobility p‐Channel Thin‐Film Transistors Based on Polycrystalline GeSn

Abstract GeSn has gained significant interest as a material for next‐generation electronic devices, including thin‐film transistors (TFTs) because of its excellent electronic properties. In this study, high‐quality polycrystalline GeSn thin films are fabricated on glass substrates and fabricated hig...

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Autors principals:	Kenta Moto, Shintaro Maeda, Kota Igura, Linyu Huang, Atsuki Morimoto, Keisuke Yamamoto, Kaoru Toko
Format:	Artigo
Idioma:	Inglês
Publicat:	Wiley-VCH 2025-06-01
Col·lecció:	Advanced Electronic Materials
Matèries:	GeSn polycrystalline thin films transistors solid‐phase crystallization
Accés en línia:	https://doi.org/10.1002/aelm.202400901
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